IXFN260N17T
MOSFET N-CH 170V 245A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS GigaMOS™ IXFN260N17T is an N-channel Power MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 170V and a continuous drain current (Id) of 245A at 25°C, with a maximum power dissipation of 1090W. Its low on-resistance (Rds On) of 6.5mOhm is achieved at 60A and 10V gate-source voltage. The device utilizes a SOT-227B package for chassis mounting, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 400 nC and input capacitance (Ciss) of 24000 pF at specified voltages. This MOSFET operates across a temperature range of -55°C to 175°C. Applications include power supplies, motor control, and industrial power systems.
Additional Information
Series: GigaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 245A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 60A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1090W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 170 V |
| Gate Charge (Qg) (Max) @ Vgs | 400 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 24000 pF @ 25 V |
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