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IXFN260N17T

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IXFN260N17T

MOSFET N-CH 170V 245A SOT227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS GigaMOS™ IXFN260N17T is an N-channel Power MOSFET designed for high-power applications. This component features a drain-source voltage (Vdss) of 170V and a continuous drain current (Id) of 245A at 25°C, with a maximum power dissipation of 1090W. Its low on-resistance (Rds On) of 6.5mOhm is achieved at 60A and 10V gate-source voltage. The device utilizes a SOT-227B package for chassis mounting, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 400 nC and input capacitance (Ciss) of 24000 pF at specified voltages. This MOSFET operates across a temperature range of -55°C to 175°C. Applications include power supplies, motor control, and industrial power systems.

Additional Information

Series: GigaMOS™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C245A (Tc)
Rds On (Max) @ Id, Vgs6.5mOhm @ 60A, 10V
FET Feature-
Power Dissipation (Max)1090W (Tc)
Vgs(th) (Max) @ Id5V @ 8mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)170 V
Gate Charge (Qg) (Max) @ Vgs400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds24000 pF @ 25 V

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