IXFN25N90
MOSFET N-CH 900V 25A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN25N90 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a Vdss rating of 900V and a continuous drain current (Id) of 25A at 25°C, with a maximum power dissipation of 600W (Tc). The Rds On is specified at a maximum of 330mOhm at 500mA and 10V. Key parameters include a gate charge (Qg) of 240 nC @ 10 V and an input capacitance (Ciss) of 10800 pF @ 25 V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a SOT-227B (miniBLOC) chassis mount configuration, this MOSFET is suitable for demanding power conversion and switching applications, commonly found in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 330mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10800 pF @ 25 V |
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