IXFN24N100F
MOSFET N-CH 1000V 24A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerRF™ IXFN24N100F is a high-voltage N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) of 24 A at 25°C (Tc), with a maximum power dissipation of 600 W (Tc). The low on-resistance (Rds On) is 390 mOhm maximum at 12 A and 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 195 nC maximum at 10 V and input capacitance (Ciss) of 6600 pF maximum at 25 V. The device is housed in a SOT-227B (miniBLOC) package for chassis mounting, offering a robust thermal solution. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage of ±20V. This MOSFET is suitable for use in power supplies, industrial motor control, and high-voltage switching applications.
Additional Information
Series: HiPerRF™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 390mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 195 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 pF @ 25 V |
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