IXFN23N100
MOSFET N-CH 1000V 23A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFN23N100 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a Drain-Source Voltage (Vdss) of 1000V and a continuous drain current (Id) of 23A at 25°C (Tc). The maximum power dissipation is rated at 600W (Tc). It is housed in a SOT-227B package, also known as miniBLOC, facilitating chassis mounting. The gate-source voltage (Vgs) range is ±20V, with a typical threshold voltage (Vgs(th)) of 5V at 8mA. The operating temperature range is -55°C to 150°C (TJ). This MOSFET is suitable for demanding applications in power conversion, industrial motor control, and high-voltage power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
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