IXFN230N10
MOSFET N-CH 100V 230A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN230N10 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device offers a continuous drain current of 230A (Tc) at 25°C and a drain-source voltage (Vdss) of 100V, dissipating up to 700W (Tc). Key electrical characteristics include a maximum Rds On of 6mOhm at 500mA and 10V, with a gate charge (Qg) of 570 nC at 10V and input capacitance (Ciss) of 19000 pF at 25V. The IXFN230N10 utilizes a robust SOT-227B chassis mount package, facilitating efficient thermal management. Operating over a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 230A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 570 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |