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IXFN210N30P3

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IXFN210N30P3

MOSFET N-CH 300V 192A SOT227B

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFN210N30P3 is a HiPerFET™, Polar3™ series N-Channel Power MOSFET designed for high-performance applications. This component features a Drain to Source Voltage (Vdss) of 300V and a continuous drain current (Id) of 192A at 25°C (Tc). With a maximum on-resistance (Rds On) of 14.5mOhm at 105A and 10V, it offers efficient power handling. The device is housed in a SOT-227B (miniBLOC) package, suitable for chassis mounting. Key parameters include a gate charge (Qg) of 268 nC at 10V and input capacitance (Ciss) of 16200 pF at 25V. It has a maximum power dissipation of 1500W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in demanding sectors such as industrial power supplies, motor control, and high-power switching applications.

Additional Information

Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C192A (Tc)
Rds On (Max) @ Id, Vgs14.5mOhm @ 105A, 10V
FET Feature-
Power Dissipation (Max)1500W (Tc)
Vgs(th) (Max) @ Id5V @ 8mA
Supplier Device PackageSOT-227B
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16200 pF @ 25 V

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