IXFN200N07
MOSFET N-CH 70V 200A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFN200N07 is a 70V N-Channel Power MOSFET designed for high-current applications. This component features a low on-resistance (Rds On) of 6mOhm at 500mA and 10V Vgs, enabling efficient power handling. With a continuous drain current of 200A at 25°C (Tc) and a maximum power dissipation of 520W (Tc), it is suitable for demanding power conversion and control circuits. The device offers a gate charge (Qg) of 480 nC at 10V and an input capacitance (Ciss) of 9000 pF at 25V. Packaged in a SOT-227B (miniBLOC) chassis mount configuration, it ensures robust thermal management. This MOSFET is commonly utilized in industrial power supplies, motor drives, and electric vehicle systems. The operating temperature range is -55°C to 150°C (TJ) with a maximum gate-source voltage of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 70 V |
| Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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