IXFN180N07
MOSFET N-CH 70V 180A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFN180N07 is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a maximum drain-source voltage (Vdss) of 70V and a continuous drain current (Id) of 180A at 25°C (Tc). With a low on-resistance (Rds On) of 7mOhm at 500mA and 10V, it minimizes conduction losses. The device boasts a high power dissipation capability of 520W (Tc) and a low junction-to-case thermal resistance, facilitated by its SOT-227B (miniBLOC) chassis mount package. Key parameters include a gate charge (Qg) of 480 nC at 10V and input capacitance (Ciss) of 9000 pF at 25V, enabling fast switching speeds. The IXYS IXFN180N07 is suitable for demanding applications across industrial motor control, power supplies, and electric vehicle systems. It operates within a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 70 V |
| Gate Charge (Qg) (Max) @ Vgs | 480 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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