IXFN170N10
MOSFET N-CH 100V 170A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS HiPerFET™ IXFN170N10 is an N-Channel power MOSFET designed for high-current applications. This component features a 100 V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 170 A at 25°C (Tc), with a maximum power dissipation of 600 W (Tc). The low on-resistance (Rds On) of 10 mOhm at 500 mA and 10 V gate-source voltage (Vgs) ensures efficient power transfer. Key parameters include a gate charge (Qg) of 515 nC at 10 V and input capacitance (Ciss) of 10300 pF at 25 V. The IXFN170N10 utilizes a SOT-227B (miniBLOC) package for chassis mounting, enabling robust thermal management. Operating temperature ranges from -55°C to 150°C (TJ). This device is suitable for use in power supply, motor control, and industrial applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 170A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 515 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10300 pF @ 25 V |