IXFN150N15
MOSFET N-CH 150V 150A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN150N15 is a high-performance N-Channel Power MOSFET from the HiPerFET™ series. This component features a 150V drain-source voltage (Vdss) and a continuous drain current of 150A at 25°C (Tc). Its low on-resistance (Rds On) is specified as a maximum of 12.5mOhm at 75A and 10V Vgs. The device offers a high power dissipation capability of 600W (Tc) and is housed in a SOT-227B package, suitable for chassis mounting. Key characteristics include a gate charge (Qg) of 360 nC at 10V and input capacitance (Ciss) of 9100 pF at 25V. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in high-power switching applications, including industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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