IXFN150N10
MOSFET N-CH 100V 150A SOT-227Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFN150N10 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-to-source breakdown voltage and supports a continuous drain current of 150A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). The low on-resistance of 12mOhm at 75A and 10V drive voltage, combined with a gate charge (Qg) of 360 nC at 10V, ensures efficient switching characteristics. It utilizes Metal Oxide technology and is housed in a SOT-227B (miniBLOC) chassis mount package for robust thermal management. Typical industries utilizing this device include industrial power supplies, motor control, and power conversion systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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