IXFN120N20
MOSFET N-CH 200V 120A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFN120N20 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) capability of 120A at 25°C (Tc). With a low on-resistance (Rds On) of 17mOhm at 500mA and 10V, it minimizes conduction losses. The IXFN120N20 offers a significant power dissipation of 600W (Tc) and is housed in a SOT-227B (miniBLOC) package for efficient thermal management and chassis mounting. Key parameters include a gate charge (Qg) of 360 nC at 10V and input capacitance (Ciss) of 9100 pF at 25V. This MOSFET is suitable for use in power switching, motor control, and power supply applications across various industrial sectors. The operating temperature range is -55°C to 150°C (TJ), with a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |
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