IXFN106N20
MOSFET N-CH 200V 106A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFN106N20 is a 200V N-Channel power MOSFET. This device offers a continuous drain current of 106A at 25°C (Tc) and a maximum power dissipation of 521W (Tc). Key parameters include a low on-resistance of 20mOhm at 500mA and 10V, a gate charge of 380 nC @ 10V, and input capacitance of 9000 pF @ 25V. The IXFN106N20 features a gate-source voltage tolerance of ±20V and threshold voltage of 4V @ 8mA. It is packaged in a SOT-227B (miniBLOC) for chassis mounting, enabling efficient thermal management. This component is suitable for high-power switching applications across various industrial sectors.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 106A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 521W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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