IXFN100N50Q3
MOSFET N-CH 500V 82A SOT227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN100N50Q3 is an N-Channel HiPerFET™, Q3 Class power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 82 A at 25°C (Tc), with a maximum power dissipation of 960 W (Tc). The low on-resistance of 49 mOhm at 50 A and 10 V gate drive voltage, coupled with a gate charge (Qg) of 255 nC, ensures efficient switching performance. The input capacitance (Ciss) is rated at 13800 pF at 25 V. Packaged in a SOT-227B (miniBLOC) with chassis mount capability, this device operates across a temperature range of -55°C to 150°C (TJ). Typical applications include switch-mode power supplies, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 960W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 255 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 25 V |