IXFN100N25
MOSFET N-CH 250V 100A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFN100N25 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 250V and a continuous drain current (Id) rating of 100A at 25°C (Tc), with a maximum power dissipation of 600W (Tc). The IXFN100N25 offers a low on-resistance (Rds On) of 27mOhm at 500mA and 10V, facilitated by its 10V gate drive requirement. Key electrical parameters include a gate charge (Qg) of 300 nC at 10V and input capacitance (Ciss) of 9100 pF at 25V. The device operates within a temperature range of -55°C to 150°C (TJ) and is housed in a SOT-227B (miniBLOC) package, suitable for chassis mounting. This MOSFET is commonly utilized in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 600W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9100 pF @ 25 V |