IXFN100N20
MOSFET N-CH 200V 100A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ N-Channel Power MOSFET, part number IXFN100N20. This device features a 200V drain-to-source voltage (Vdss) and a continuous drain current of 100A at 25°C (Tc). Designed for high power applications, it offers a maximum power dissipation of 520W (Tc). The N-Channel MOSFET utilizes Metal Oxide technology with a low on-resistance (Rds On) of 23mOhm at 500mA and 10V. Key capacitance parameters include input capacitance (Ciss) of 9000 pF at 25V and gate charge (Qg) of 380 nC at 10V. The IXFN100N20 is housed in a SOT-227B (miniBLOC) package, suitable for chassis mounting. It operates within a temperature range of -55°C to 150°C (TJ) and has a gate-source voltage limit of ±20V. This component is commonly used in power switching and motor control applications within the industrial and automotive sectors.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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