IXFN100N10S2
MOSFET N-CH 100V 100A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN100N10S2 is an N-Channel HiPerFET™ Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 100A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 15mOhm maximum at 500mA and 10V Vgs. With a maximum power dissipation of 360W (Tc), it is suitable for high-power switching and linear applications. The IXFN100N10S2 utilizes a SOT-227B (miniBLOC) package with chassis mount capability for efficient thermal management. Key parameters include a gate charge (Qg) of 180 nC maximum at 10V Vgs and input capacitance (Ciss) of 4500 pF maximum at 25V Vds. Operating temperature ranges from -40°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V. This component is commonly found in industrial power supplies, motor control, and power factor correction circuits.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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