IXFN100N10S1
MOSFET N-CH 100V 100A SOT-227BManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFN100N10S1 is an N-Channel HiPerFET™ MOSFET designed for high-power applications. This device features a drain-to-source voltage of 100V and a continuous drain current of 100A at 25°C (Tc), with a maximum power dissipation of 360W (Tc). The low on-resistance is specified as 15mOhm at 500mA and 10V gate drive. Key parameters include a gate charge of 180nC at 10V and input capacitance of 4500pF at 25V. It is housed in a SOT-227B package, commonly known as miniBLOC, suitable for chassis mounting. Operating temperature range is -40°C to 150°C (TJ). This component finds application in power conversion, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | SOT-227B |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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