IXFM67N10
MOSFET N-CH 100V 67A TO204AEManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS HiPerFET™ IXFM67N10 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a drain-to-source voltage (Vdss) of 100V and a continuous drain current (Id) of 67A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The Rds On is specified at a maximum of 25mOhm at 33.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 260 nC at 10V and input capacitance (Ciss) of 4500 pF at 25V. It operates within a temperature range of -55°C to 150°C (TJ) and is housed in a TO-204AE through-hole package. This component is suitable for use in industrial power supplies, motor control, and high-current switching circuits.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 33.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-204AE |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
