IXFM42N20
MOSFET N-CH 200V 42A TO204AEManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFM42N20 is a 200V N-Channel power MOSFET designed for high-efficiency switching applications. This device offers a continuous drain current capability of 42A at 25°C (Tc) with a maximum power dissipation of 300W (Tc). The IXFM42N20 features a low on-resistance of 60mOhm maximum at 21A, 10V, facilitating reduced conduction losses. Key parameters include a gate charge (Qg) of 220 nC at 10V and input capacitance (Ciss) of 4400 pF at 25V. The MOSFET is packaged in a TO-204AE through-hole configuration, suitable for demanding thermal management. It operates across a temperature range of -55°C to 150°C (TJ). This component finds application in power supply units, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-204AE |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 220 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
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