IXFM15N60
MOSFET N-CH 600V 15A TO204AEManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFM15N60 is a 600V N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a continuous drain current of 15A (Tc) and a maximum power dissipation of 300W (Tc). With a low on-resistance of 500mOhm at 7.5A and 10V Vgs, it minimizes conduction losses. The device offers a low gate charge of 170 nC (typical) at 10V, contributing to reduced switching losses. It is housed in a TO-204AE package for through-hole mounting, providing robust thermal performance. This IXYS MOSFET is commonly employed in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 500mOhm @ 7.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-204AE |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4500 pF @ 25 V |
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