IXFM10N90
MOSFET N-CH 900V 10A TO204AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFM10N90 is a HiPerFET™ N-Channel Power MOSFET designed for high voltage applications. This component features a Drain-Source Voltage (Vdss) of 900V and a continuous Drain Current (Id) of 10A at 25°C. With a low on-resistance of 1.1 Ohm maximum at 5A and 10V, and a maximum power dissipation of 300W (Tc), it is suitable for demanding power conversion tasks. The device is housed in a TO-204AA (TO-3) package for chassis mounting. Key parameters include a typical gate charge of 155 nC at 10V and input capacitance (Ciss) of 4200 pF at 25V. Operating temperature range is from -55°C to 150°C. This MOSFET is utilized in power supply units, motor control, and industrial power systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA |
| Supplier Device Package | TO-204AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4200 pF @ 25 V |
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