IXFL70N60Q2
MOSFET N-CH 600V 37A ISOPLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFL70N60Q2 is an N-Channel MOSFET from the HiPerFET™, Q2 Class series. This device offers a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 37A at 25°C (Tc). Featuring a low on-resistance (Rds On) of 92mOhm at 35A and 10V Vgs, it is designed for high-efficiency power switching applications. With a maximum power dissipation (Pd) of 360W (Tc), this component is suitable for demanding power conversion circuits. The IXFL70N60Q2 utilizes a through-hole mounting type and is packaged in an ISOPLUS264™ configuration. Key parameters include a gate charge (Qg) of 265 nC at 10V and an input capacitance (Ciss) of 12000 pF at 25V. This MOSFET is commonly employed in industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
| Rds On (Max) @ Id, Vgs | 92mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | ISOPLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 265 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF @ 25 V |
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