IXFL60N60
MOSFET N-CH 600V 60A ISOPLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFL60N60 is a high-performance N-Channel Power MOSFET designed for demanding applications. This component offers a 600V drain-source breakdown voltage and a continuous drain current capability of 60A at 25°C (Tc), supported by a maximum power dissipation of 700W (Tc). Featuring low on-resistance of 80mOhm at 30A and 10V Vgs, it minimizes conduction losses. Key parameters include a gate charge of 380nC (max) at 10V and input capacitance (Ciss) of 10000pF (max) at 25V. The device is housed in an ISOPLUS264™ package, suitable for through-hole mounting. This MOSFET is utilized in power supply, motor control, and industrial power applications.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 700W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | ISOPLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V |
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