IXFL44N80
MOSFET N-CH 800V 44A ISOPLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFL44N80 is an N-Channel Power MOSFET designed for high-voltage applications. This component features a drain-to-source voltage (Vdss) of 800V and a continuous drain current (Id) of 44A at 25°C (Tc). With a maximum power dissipation of 550W (Tc) and a low on-resistance (Rds On) of 165mOhm at 22A and 10V, it offers efficient power handling. The MOSFET utilizes Metal Oxide technology and is housed in an ISOPLUS264™ through-hole package. Key parameters include a gate charge (Qg) of 380 nC at 10V and input capacitance (Ciss) of 10000 pF at 25V. This device is suitable for applications in high-voltage power supplies, industrial motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | ISOPLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V |
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