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IXFL44N60

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IXFL44N60

MOSFET N-CH 600V 41A ISOPLUS264

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

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The IXYS IXFL44N60 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a 600V drain-to-source voltage (Vdss) and a continuous drain current of 41A (Tc) at 25°C. With a maximum power dissipation of 500W (Tc), it is suitable for demanding thermal environments. The device exhibits a low on-resistance of 130mOhm at 22A and 10V gate drive, minimizing conduction losses. Key characteristics include a gate charge (Qg) of 330 nC at 10V and an input capacitance (Ciss) of 8900 pF at 25V. The IXFL44N60 is housed in an ISOPLUS264™ package, facilitating through-hole mounting. This MOSFET is utilized in various industries including industrial automation, power supplies, and motor control. It operates within a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V.

Additional Information

Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C41A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 22A, 10V
FET Feature-
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id4.5V @ 8mA
Supplier Device PackageISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 25 V

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