IXFL40N110P
MOSFET N-CH 1100V 21A ISOPLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFL40N110P is an N-Channel HiPerFET™ Polar MOSFET designed for high-voltage applications. This component features a Drain to Source Voltage (Vdss) of 1100 V and a continuous drain current (Id) of 21 A at 25°C (Tc). The Rds On is specified at a maximum of 280 mOhms at 20 A and 10 V gate drive. Key parameters include a Gate Charge (Qg) of 310 nC at 10 V and an input capacitance (Ciss) of 19000 pF at 25 V. The device is housed in an ISOPLUS264™ package, suitable for through-hole mounting. This MOSFET is utilized in power supply, industrial, and high-voltage switching applications.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 21A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | ISOPLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1100 V |
| Gate Charge (Qg) (Max) @ Vgs | 310 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |
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