IXFL39N90
MOSFET N-CH 900V 34A ISOPLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS HiPerFET™ IXFL39N90 is a high-performance N-Channel MOSFET designed for demanding power applications. This device features a 900V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 34A at 25°C (Tc). With a maximum on-resistance (Rds On) of 220mOhm at 19.5A and 10V Vgs, it offers efficient power handling with a dissipation capability of 580W (Tc). The component is housed in an ISOPLUS264™ package, facilitating through-hole mounting. Key parameters include a gate charge (Qg) of 375 nC at 10V and input capacitance (Ciss) of 13400 pF at 25V. This MOSFET is suitable for use in industrial power supplies, motor control, and renewable energy systems. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 19.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 580W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | ISOPLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 375 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13400 pF @ 25 V |
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