IXFL38N100Q2
MOSFET N-CH 1000V 29A ISOPLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFL38N100Q2 is an N-Channel HiPerFET™, Q2 Class MOSFET designed for high-voltage applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 1000 V and a continuous drain current (Id) of 29A at 25°C, with a maximum power dissipation of 380W. The Rds On is specified at a maximum of 280mOhm at 19A and 10V gate drive. Key parameters include a gate charge (Qg) of 250 nC at 10V and an input capacitance (Ciss) of 13500 pF at 25V. The device operates within a temperature range of -55°C to 150°C and is housed in an ISOPLUS264™ package. This MOSFET is suitable for demanding applications in power supply units and industrial motor control.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 19A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Supplier Device Package | ISOPLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13500 pF @ 25 V |
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