IXFL34N100
MOSFET N-CH 1000V 30A ISOPLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFL34N100 is a HiPerFET™ N-Channel Power MOSFET designed for high-voltage applications. This component features a maximum Drain-Source Voltage (Vdss) of 1000 V and a continuous Drain Current (Id) of 30 A at 25°C. With a low on-resistance (Rds On) of 280 mOhm at 30 A and 10 V, coupled with a maximum power dissipation of 550 W, it offers efficient power handling. Key parameters include a Gate Charge (Qg) of 380 nC at 10 V and Input Capacitance (Ciss) of 9200 pF at 25 V, facilitating robust switching performance. The device is packaged in a through-hole ISOPLUS264™ (TO-264-3, TO-264AA) format, suitable for demanding power supply designs, industrial motor control, and high-voltage switching applications. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | ISOPLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 1000 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V |
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