IXFL30N120P
MOSFET N-CH 1200V 18A I5PAKManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™, Polar Series N-Channel Power MOSFET, part number IXFL30N120P. This device features a 1200V drain-source voltage (Vdss) and a continuous drain current of 18A at 25°C (Tc). The IXFL30N120P offers a maximum on-resistance (Rds On) of 380mOhm at 15A and 10V gate drive. With a maximum power dissipation of 357W (Tc), this through-hole mounted MOSFET is housed in an ISOPLUSi5-Pak™ package. Key characteristics include a gate charge (Qg) of 310nC at 10V and input capacitance (Ciss) of 19000pF at 25V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply and motor control.
Additional Information
Series: HiPerFET™, PolarRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | ISOPLUSi5-Pak™ |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 357W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 1mA |
| Supplier Device Package | ISOPLUSi5-Pak™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 310 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 19000 pF @ 25 V |
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