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IXFL210N30P3

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IXFL210N30P3

MOSFET N-CH 300V 108A ISOPLUS264

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFL210N30P3 is a high-performance N-Channel Power MOSFET from the HiPerFET™, Polar3™ series. This component features a drain-source voltage (Vdss) of 300V and a continuous drain current (Id) of 108A at 25°C (Tc). With a low on-resistance (Rds On) of 16mOhm at 105A and 10V, it offers efficient power handling capabilities up to 520W (Tc). The device utilizes advanced MOSFET technology and is presented in an ISOPLUS264™ package for through-hole mounting. Typical applications include high-power switching power supplies, motor control, and industrial power systems. Key parameters include a gate charge (Qg) of 268 nC at 10V and input capacitance (Ciss) of 16200 pF at 25V. The operating temperature range is -55°C to 150°C (TJ).

Additional Information

Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C108A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 105A, 10V
FET Feature-
Power Dissipation (Max)520W (Tc)
Vgs(th) (Max) @ Id5V @ 8mA
Supplier Device PackageISOPLUS264™
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs268 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds16200 pF @ 25 V

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