IXFL132N50P3
MOSFET N-CH 500V 63A ISOPLUS264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFL132N50P3 is an N-Channel Power MOSFET from the HiPerFET™, Polar3™ series, housed in an ISOPLUS264™ package. This device features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 63A at 25°C (Tc), with a maximum power dissipation of 520W (Tc). The Rds(on) is specified at a maximum of 43mOhm at 66A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 250nC at 10V and input capacitance (Ciss) of 18600pF at 25V. Operating temperature ranges from -55°C to 150°C (TJ). This component is suitable for demanding applications in power supply, motor control, and industrial power conversion.
Additional Information
Series: HiPerFET™, Polar3™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 63A (Tc) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 66A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 520W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 8mA |
| Supplier Device Package | ISOPLUS264™ |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 18600 pF @ 25 V |
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