IXFK90N60X
MOSFET N-CH 600V 90A TO264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK90N60X is a high-performance N-Channel Power MOSFET from the HiPerFET™, Ultra X series. This component features a maximum drain-source voltage (Vdss) of 600V and a continuous drain current (Id) of 90A at 25°C (Tc). With a low on-resistance (Rds On) of 38mOhm at 45A and 10V, it offers efficient power handling with a maximum power dissipation of 1100W (Tc). The device utilizes a TO-264AA package for through-hole mounting, suitable for demanding applications. Key parameters include a gate charge (Qg) of 210 nC at 10V and input capacitance (Ciss) of 8500 pF at 25V. This MOSFET is designed for use in power conversion, industrial motor control, and high-voltage switching applications.
Additional Information
Series: HiPerFET™, Ultra XRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1100W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | TO-264AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8500 pF @ 25 V |
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