IXFK90N30
MOSFET N-CH 300V 90A TO-264Manufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK90N30 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 300V and a continuous drain current (Id) rating of 90A at 25°C (Tc). With a low on-resistance (Rds On) of 33mOhm at 45A and 10V Vgs, it minimizes conduction losses. The device offers a high power dissipation capability of 560W (Tc) and includes a gate charge (Qg) of 360 nC at 10V, with an input capacitance (Ciss) of 10000 pF at 25V. The IXFK90N30 is housed in a TO-264AA through-hole package, suitable for demanding thermal management. This MOSFET is utilized in industries such as industrial power supplies, motor control, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10000 pF @ 25 V |
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