IXFK90N20Q
MOSFET N-CH 200V 90A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK90N20Q is an N-Channel HiPerFET™, Q Class Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 90A (Tc) at 25°C. With a low on-resistance (Rds On) of 22mOhm at 45A and 10V, it offers excellent conduction losses. The device boasts a maximum power dissipation of 500W (Tc) and a gate charge (Qg) of 190 nC @ 10V. Utilizing Metal Oxide technology, it is packaged in a TO-264AA (IXFK) through-hole configuration, suitable for demanding thermal management. Typical applications include high-power switched-mode power supplies, DC-DC converters, and motor control systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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