IXFK90N20
MOSFET N-CH 200V 90A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK90N20 is a HiPerFET™ N-Channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 90A at 25°C (Tc). With a maximum power dissipation of 500W (Tc), it is suitable for demanding power conversion and control circuits. The Rds(On) is rated at a maximum of 23mOhm at 45A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 380 nC (Max) at 10V and an Input Capacitance (Ciss) of 9000 pF (Max) at 25V. The device utilizes Metal Oxide technology and operates within a temperature range of -55°C to 150°C (TJ). Packaged in a TO-264AA (IXFK) through-hole configuration, this MOSFET is commonly employed in industrial power supplies, motor control, and high-power switching applications.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 43 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 380 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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