IXFK88N20Q
MOSFET N-CH 200V 88A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK88N20Q is a HiPerFET™, Q Class N-Channel Power MOSFET featuring a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 88A at 25°C (Tc). This device offers a low on-resistance (Rds On) of 30mOhm maximum at 44A and 10V Vgs, facilitating high-efficiency power conversion. With a maximum power dissipation of 500W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 146 nC maximum at 10V Vgs and an input capacitance (Ciss) of 4150 pF maximum at 25V Vds. The IXFK88N20Q is housed in a TO-264AA (IXFK) through-hole package, designed for robust thermal management. This component finds application in power supply units, motor control, and welding equipment.
Additional Information
Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 88A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4150 pF @ 25 V |
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