IXFK80N20Q
MOSFET N-CH 200V 80A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFK80N20Q is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C (Tc). The IXFK80N20Q offers a low on-resistance (Rds On) of 28mOhm maximum at 500mA and 10V Vgs, contributing to reduced conduction losses. With a maximum power dissipation of 360W (Tc), it is suitable for demanding power conversion circuits. The device utilizes a TO-264AA (IXFK) through-hole package for robust thermal management. Key parameters include a gate charge (Qg) of 180nC at 10V and input capacitance (Ciss) of 4600pF at 25V. This MOSFET is commonly employed in industrial power supplies, electric vehicle charging, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4600 pF @ 25 V |
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