IXFK80N20
MOSFET N-CH 200V 80A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK80N20 is a HiPerFET™ N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 80A at 25°C (Tc). With a low on-resistance (Rds On) of 30mOhm at 500mA and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 360W (Tc) and a gate charge (Qg) of 280 nC at 10V, facilitating fast switching speeds. Its input capacitance (Ciss) is specified at 5900 pF maximum at 25V. The IXFK80N20 is housed in a TO-264AA (IXFK) package for through-hole mounting, suitable for demanding applications in power supplies, motor control, and industrial equipment. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 25 V |
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