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IXFK74N50P2

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IXFK74N50P2

MOSFET N-CH 500V 74A TO264AA

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

IXYS IXFK74N50P2 is an N-Channel Power MOSFET from the HiPerFET™, PolarP2™ series. It features a 500V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 74A at 25°C. This device offers a low on-resistance (Rds On) of 77mOhm at 500mA and 10V. The IXFK74N50P2 is designed for high power applications, with a maximum power dissipation of 1400W. Key parameters include a gate charge (Qg) of 165 nC at 10V and an input capacitance (Ciss) of 9900 pF at 25V. The MOSFET is housed in a TO-264AA package, suitable for through-hole mounting. This component is utilized in power conversion and high-voltage switching applications across various industries.

Additional Information

Series: HiPerFET™, PolarP2™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C74A (Tc)
Rds On (Max) @ Id, Vgs77mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)1400W (Tc)
Vgs(th) (Max) @ Id5V @ 4mA
Supplier Device PackageTO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)500 V
Gate Charge (Qg) (Max) @ Vgs165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds9900 pF @ 25 V

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