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IXFK73N30Q

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IXFK73N30Q

MOSFET N-CH 300V 73A TO264AA

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFK73N30Q is an N-Channel HiPerFET™, Q Class Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 300V and a continuous Drain Current (Id) of 73A at 25°C (Tc), with a maximum power dissipation of 500W (Tc). The device exhibits a low on-resistance of 45mOhm (Max) at 500mA and 10V, coupled with a gate charge of 195 nC (Max) at 10V. Its input capacitance (Ciss) is 5400 pF (Max) at 25V. Packaged in a TO-264AA (IXFK) through-hole configuration, this MOSFET operates across a temperature range of -55°C to 150°C (TJ). It is suitable for demanding applications in power supplies, motor control, and industrial automation.

Additional Information

Series: HiPerFET™, Q ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C73A (Tc)
Rds On (Max) @ Id, Vgs45mOhm @ 500mA, 10V
FET Feature-
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id4V @ 4mA
Supplier Device PackageTO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)300 V
Gate Charge (Qg) (Max) @ Vgs195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds5400 pF @ 25 V

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