IXFK73N30
MOSFET N-CH 300V 73A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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The IXYS IXFK73N30 is a HiPerFET™ N-Channel Power MOSFET designed for high-power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 300V and a continuous Drain Current (Id) of 73A at 25°C (Tc). With a maximum power dissipation of 500W (Tc) and a low on-resistance of 45mOhm at 500mA and 10V Vgs, it is suitable for demanding power conversion tasks. The device utilizes a TO-264AA through-hole package and operates across a temperature range of -55°C to 150°C (TJ). Key parameters include a gate charge of 360 nC at 10V Vgs and input capacitance of 9000 pF at 25V Vds. This MOSFET is commonly employed in power supplies, industrial automation, and motor control systems.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 360 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9000 pF @ 25 V |
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