IXFK72N20
MOSFET N-CH 200V 72A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS HiPerFET™ IXFK72N20 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 200V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 72A at 25°C (Tc). With a low on-resistance (Rds On) of 35mOhm at 36A and 10V Vgs, it offers minimal conduction losses. The device supports a maximum power dissipation of 360W (Tc) and is packaged in a TO-264AA (IXFK) through-hole package for robust thermal management. Key parameters include a gate charge (Qg) of 280 nC (max) at 10V Vgs and input capacitance (Ciss) of 5900 pF (max) at 25V Vds. The IXFK72N20 is suitable for use in industrial power supplies, motor drives, and renewable energy systems.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 280 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5900 pF @ 25 V |
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