IXFK66N50Q2
MOSFET N-CH 500V 66A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFK66N50Q2 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a robust 500V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 66A at 25°C (Tc). With a maximum power dissipation of 735W (Tc), it is suitable for demanding thermal conditions. The low on-resistance (Rds On) of 80mOhm at 500mA and 10V gate drive voltage, coupled with a gate charge (Qg) of 200 nC at 10V, ensures efficient switching performance. This component utilizes advanced trench technology for reduced conduction losses and improved switching speed. The TO-264AA package facilitates through-hole mounting and is designed for applications in power supplies, motor control, and industrial automation. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 735W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 25 V |
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