IXFK64N50Q3
MOSFET N-CH 500V 64A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS IXFK64N50Q3 is a high-performance N-Channel MOSFET from the HiPerFET™, Q3 Class series. This through-hole component features a 500 V drain-to-source voltage and a continuous drain current capability of 64A at 25°C (Tc). With a maximum on-resistance (Rds On) of 85mOhm at 32A and 10V, it offers efficient power handling up to 1000W (Tc).
Key parameters include a gate charge (Qg) of 145 nC (max) at 10 V and input capacitance (Ciss) of 6950 pF (max) at 25 V. The device operates within a temperature range of -55°C to 150°C (TJ) and has a Vgs(th) of 6.5V (max) at 4mA. The TO-264AA package is suitable for demanding applications in power conversion, industrial motor control, and electric vehicle charging systems.
Additional Information
Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 44 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1000W (Tc) |
| Vgs(th) (Max) @ Id | 6.5V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6950 pF @ 25 V |
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