IXFK60N25Q
MOSFET N-CH 250V 60A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
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IXYS HiPerFET™ IXFK60N25Q is an N-Channel power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 250 V and a continuous drain current (Id) of 60 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 47 mOhm maximum at 500 mA and 10 V gate-source voltage. With a maximum power dissipation of 360 W (Tc) and a gate charge (Qg) of 180 nC maximum at 10 V, the IXFK60N25Q is suitable for demanding applications in power supplies, motor control, and industrial power systems. The component is housed in a TO-264AA package, facilitating through-hole mounting.
Additional Information
Series: HiPerFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 47mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 360W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 4mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
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