IXFK52N60Q2
MOSFET N-CH 600V 52A TO264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
IXYS IXFK52N60Q2 is a 600V N-Channel HiPerFET™ Q2 Class power MOSFET designed for high-efficiency switching applications. This component features a continuous drain current of 52A at 25°C and a maximum power dissipation of 735W at 25°C. The IXFK52N60Q2 offers a low on-resistance of 115mOhm at 500mA and 10V gate drive. Key parameters include a drain-to-source voltage (Vdss) of 600V, gate charge (Qg) of 198 nC at 10V, and input capacitance (Ciss) of 6800 pF at 25V. This device is housed in a TO-264AA package, suitable for through-hole mounting. The IXFK52N60Q2 is utilized in applications such as power supplies, industrial motor drives, and renewable energy systems.
Additional Information
Series: HiPerFET™, Q2 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 115mOhm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 735W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 198 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6800 pF @ 25 V |
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