IXFK50N50
MOSFET N-CH 500V 50A TO-264AAManufacturer: IXYS
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The IXYS HiPerFET™ IXFK50N50 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 500V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 50A at 25°C (Tc). With a maximum power dissipation of 560W (Tc), it is suitable for demanding power conversion tasks. Key parameters include a low on-resistance (Rds On) of 80mOhm at 25A and 10V, and a gate charge (Qg) of 330 nC at 10V. The input capacitance (Ciss) is 9400 pF at 25V. This device utilizes a through-hole mounting type in a TO-264AA package. Its operating temperature range is -55°C to 150°C (TJ). The IXFK50N50 is commonly found in industrial power supplies, motor control, and energy infrastructure.
Additional Information
Series: HiPerFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 560W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 8mA |
| Supplier Device Package | TO-264AA (IXFK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 330 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9400 pF @ 25 V |
Request a Quote
Clients Also Buy
FMM75-01F
MOSFET 2N-CH 100V 75A I4-PAC
IXFX64N60Q3
MOSFET N-CH 600V 64A PLUS247-3
VMO650-01F
MOSFET N-CH 100V 690A Y3-DCB
