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IXFK48N60Q3

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IXFK48N60Q3

MOSFET N-CH 600V 48A TO264AA

Manufacturer: IXYS

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The IXYS IXFK48N60Q3 is a high-performance N-Channel MOSFET from the HiPerFET™, Q3 Class series. This component features a 600V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 48A at 25°C (Tc). With a maximum Rds(on) of 140mOhm at 24A and 10V Vgs, it offers efficient power handling with a maximum power dissipation of 1000W (Tc). The device boasts a gate charge (Qg) of 140 nC at 10V and an input capacitance (Ciss) of 7020 pF at 25V. Packaged in a TO-264AA (IXFK) through-hole configuration, it operates over a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in power supplies, industrial motor control, and high-voltage switching.

Additional Information

Series: HiPerFET™, Q3 ClassRoHS Status: ROHS3 CompliantManufacturer Lead Time: 46 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-264-3, TO-264AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C48A (Tc)
Rds On (Max) @ Id, Vgs140mOhm @ 24A, 10V
FET Feature-
Power Dissipation (Max)1000W (Tc)
Vgs(th) (Max) @ Id6.5V @ 4mA
Supplier Device PackageTO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)600 V
Gate Charge (Qg) (Max) @ Vgs140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7020 pF @ 25 V

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